datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

4N150 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
4N150 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
STFV4N150 - STFW4N150 - STP4N150 - STW4N150
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
Drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 1 mA, VGS = 0
1500
VDS = Max rating
VDS = Max rating, TC = 125 °C
V
10 µA
500 µA
VGS = ± 30 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2 A
± 100 nA
3
4
5
V
5
7
Table 6. Dynamic
Symbol
Parameter
Test conditions
gfs (1) Forward transconductance VDS = 30 V, ID = 2 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
td(on)
Tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 750 V, ID = 2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 600 V, ID = 4 A,
VGS = 10 V
(see Figure 22)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
3.5
S
1300
pF
120
pF
12
pF
35
ns
30
ns
45
ns
45
ns
30 50 nC
10
nC
9
nC
4/16
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]