FDS6676AS View Datasheet(PDF) - Fairchild Semiconductor
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Typical Characteristics
50
VGS = 10V
40
6.0V
30
3.5V
4.5V
3.0V
20
10
2.5V
0
0
0.25
0.5
0.75
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.4
2.2
VGS = 3.0V
2
1.8
1.6
3.5V
1.4
1.2
1
4.0V
4.5V
6.0V
10V
0.8
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
ID = 14.5A
VGS =10V
1.2
1
0.8
0.6
-55 -35 -15 5 25 45 65 85 105 125
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.016
0.014
ID = 7.3 A
0.012
0.01
0.008
TA = 125oC
0.006
TA = 25oC
0.004
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
VDS = 5V
40
30
20
10
TA = 125oC
-55oC
25oC
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
0.001
0
0.2
0.4
0.6
0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6676AS Rev B2
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