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FDS6676AS View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FDS6676AS 30V N-Channel PowerTrench® SyncFET™ Fairchild
Fairchild Semiconductor Fairchild
FDS6676AS Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 3.5 A (Note 2)
Voltage
VGS = 0 V, IS = 7 A
(Note 2)
trr
Diode Reverse Recovery Time
IF = 14.5A,
IRM
Diode Reverse Recovery Current diF/dt = 300 A/µs
(Note 3)
0.4 0.7
V
0.5
27
nS
1.9
A
Qrr
Diode Reverse Recovery Charge
26
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
FDS6676AS Rev B2
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