FDS6676AS View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
| FDS6676AS Datasheet PDF : 0 Pages | |||
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA
30
Breakdown Voltage Temperature ID = 10 mA, Referenced to 25°C
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
IGSS
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS,
ID = 1 mA
1
ID = 10 mA, Referenced to 25°C
VGS = 10 V, ID = 14.5 A
VGS = 4.5 V, ID = 13.2 A
VGS=10 V, ID =14.5A, TJ=125°C
VGS = 10 V, VDS = 5 V
50
VDS = 10 V, ID = 14.5 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at Vgs=10V
Qg
Total Gate Charge at Vgs=5V
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDD = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
VDD = 15 V, ID = 14.5 A,
V
20
mV/°C
500 µA
±100 nA
1.5
3
V
–4
mV/°C
4.5
6.0
mΩ
5.9 7.25
6.7 8.5
A
66
S
2510
710
270
1.6
pF
pF
pF
2.8
Ω
10
20
ns
12
22
ns
43
69
ns
29
46
ns
17
31
ns
22
35
ns
34
54
ns
29
46
ns
45
63
nC
25
35
nC
7
nC
8
nC
FDS6676AS Rev B2
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