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FDS6676AS(2005-4) View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FDS6676AS
(Rev.:2005-4)
Fairchild
Fairchild Semiconductor Fairchild
FDS6676AS Datasheet PDF : 0 Pages
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg(TOT)
Qg
Qgs
Qgd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Test Conditions
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V, ID = 14.5 A
VGS = 4.5 V, ID = 13.2 A
VGS = 10 V, ID = 14.5A, TJ = 125°C
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 14.5 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDD = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDD = 15 V, ID = 14.5 A,
Min
30
1
50
Typ
28
1.5
–3.3
4.9
5.9
6.7
66
2510
710
270
1.6
10
12
43
29
17
22
34
29
45
25
7
8
Max Units
V
mV/°C
500
µA
±100
nA
3
V
mV/°C
6.0
m
7.25
8.5
A
S
pF
pF
pF
20
ns
22
ns
69
ns
46
ns
31
ns
35
ns
54
ns
46
ns
63
nC
35
nC
nC
nC
2
FDS6676AS Rev. A (X)
www.fairchildsemi.com
 

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