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FDS6676AS_NL(2005-4) View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FDS6676AS_NL
(Rev.:2005-4)
Fairchild
Fairchild Semiconductor Fairchild
FDS6676AS_NL Datasheet PDF : 0 Pages
April 2005
FDS6676AS
30V N-Channel PowerTrench® SyncFET™
Features
14.5 A, 30 V. RDS(ON) max= 6.0 m@ VGS = 10 V
RDS(ON) max= 7.25 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (45nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching
High power and current handling capability
Applications
DC/DC converter
Low side notebook
General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low RDS(ON) and low gate charge. The
FDS6676AS includes an integrated Schottky diode using Fair-
child’s monolithic SyncFET technology.
D
D
D
D
SO-8
G
SS
S
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R θ JA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
30
±20
14.5
50
2.5
1.2
1
–55 to +150
50
25
Package Marking and Ordering Information
Device Marking
FDS6676AS
FDS6676AS
Device
FDS6676AS
FDS6676AS_NL (Note 3)
Reel Size
13’’
13’’
Tape width
12mm
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2500 units
©2005 Fairchild Semiconductor Corporation
1
FDS6676AS Rev. A (X)
www.fairchildsemi.com
 

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