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STE53NA50 View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
View to exact match
STE53NA50
NJSEMI
New Jersey Semiconductor NJSEMI
STE53NA50 Datasheet PDF : 0 Pages
STE53NA50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthoh Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
°C/W
°C/W
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current. Repetitive or Not-Repetitive
(pulse width limited by T, max, 8 < 1%)
Single Pulse Avalanche Energy
(starting T, = 25 °C, ID = IAR, VDD= 50 V)
Max Value
26
1014
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. : Typ. Max. Unit
V(BR)DSS Drain-source
ID - 1 mA VGS - 0
500
V
Breakdown Voltage
loss Zero Gate Voltage
VQS = Max Rating
Drain Current (Vos = 0) VDS = Max Rating
Tc = 125 °C
100
MA
1000 MA
IGSS Gate-body Leakage
Current (Vos = 0)
VGS = ± 30 V
± 400 nA
Symbol
VGS(th)
RDS(OH)
iD(ori)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 1 mA
Static Drain-source On V G s = 1 0 V ID = 27 A
Resistance
On State Drain Current VDS > lo(on) x Rosiommax
VGS = 10 V
Min. Typ. Max. Unit
2.25
3
3,75
V
0.075 0.085 a
53
A
DYNAMIC
Symbol
9f.<*>
Ci.s3
Coss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS >lD(on) X RDS(OD)MAX ID = 27 A
Min. Typ. Max. Unit
25 ;
S
VDS - 25 V f = 1 MHz VGS = 0
; 13
16
nF
1500 2000 pF
450 650 pF
 

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