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IRFP23N50LPBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP23N50LPBF HEXFET® Power MOSFET IR
International Rectifier IR
IRFP23N50LPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFP23N50LPbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
10
1
Crss
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
25
20
15
10
5
0
0 100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
Fig 6. Typ. Output Capacitance
Stored Energy vs. VDS
12
ID = 23
10
7
VDS = 400V
VDS = 250V
VDS = 100V
5
2
0
0
24
48
72
96
120
QG, Total Gate Charge (nC)
Fig 7. Typical Gate Charge vs.
Gate-to-Source Voltage
4
100.00
10.00
TJ = 150°C
TJ = 25°C
1.00
0.10
0.0
VGS = 0V
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
Fig 8. Typical Source-Drain Diode
Forward Voltage
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