IRFP23N50LPBF View Datasheet(PDF) - International Rectifier
Part Name
Description
View to exact match
IRFP23N50LPBF Datasheet PDF : 9 Pages
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PD - 94999
IRFP23N50LPbF
Applications
SMPS MOSFET
HEXFET® Power MOSFET
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
VDSS RDS(on) typ. Trr typ. ID
• Uninterruptible Power Supplies
• Motor Control applications
500V 0.190Ω 170ns 23A
• Lead-Free
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise
immunity.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
23
15
92
370
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
2.9
± 30
14
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case )
x x 10lb in (1.1N m)
Symbol
IS
Parameter
Continuous Source Current
Min. Typ. Max. Units Conditions
––– ––– 23
MOSFET symbol
(Body Diode)
A showing the
ISM
Pulsed Source Current
à (Body Diode)
VSD
Diode Forward Voltage
––– ––– 92
––– ––– 1.5
integral reverse
p-n junction diode.
f V TJ = 25°C, IS = 14A, VGS = 0V
trr
Reverse Recovery Time
f ––– 170 250 ns TJ = 25°C, IF = 23A
––– 220 330
TJ = 125°C, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
f ––– 560 840 nC TJ = 25°C, IS = 23A, VGS = 0V
f ––– 980 1500
TJ = 125°C, di/dt = 100A/µs
IRRM
Reverse Recovery Current
––– 7.6 11 A TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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1
02/11/04
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