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IRFP064 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFP064
Vishay
Vishay Semiconductors Vishay
IRFP064 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Power MOSFET
IRFP064, SiHFP064
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
190
Qgs (nC)
55
Qgd (nC)
90
Configuration
Single
0.009
D
TO-247AC
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Ultra Low On- Resistance
• Very Low Thermal Resistance
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
TO-247AC
IRFP064PbF
SiHFP064-E3
IRFP064
SiHFP064
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 69 μH, Rg = 25 Ω, IAS = 130 A (see fig. 12).
c. ISD 130 A, dI/dt 300 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package (die current = 130 A).
LIMIT
60
± 20
70
70
520
2.0
1000
70
30
300
4.5
- 55 to + 175
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91201
S11-0447-Rev. C, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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