FCH35N60 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FCH35N60 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FCH35N60
Device
FCH35N60
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
BVDS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss eff.
Qg
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Test Conditions
Min.
ID = 250 μA, VGS = 0 V, TJ = 25oC
600
ID = 250 μA, VGS = 0 V, TJ = 150oC
-
ID = 250 μA, Referenced to 25oC
-
VGS = 0 V, ID = 16 A
-
VDS = 600 V, VGS = 0 V
-
VDS = 480 V, TC = 125oC
-
VGS = ±30 V, VDS = 0 V
-
VGS = VDS, ID = 250 μA
3.0
VGS = 10 V, ID = 17.5 A
-
VDS = 40 V, ID = 17.5 A
-
-
VDS = 25 V, VGS = 0 V
f = 1 MHz
-
-
VDS = 480 V, VGS = 0 V, f = 1.0 MHz -
VDS = 0 V to 480 V, VGS = 0 V
-
-
VDS = 480 V, ID = 35 A
VGS = 10 V
-
(Note 4)
-
Drain Open, F= 1 MHZ
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300 V, ID = 35 A
RG = 4.7 Ω
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 35 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 35 A
dIF/dt = 100 A/μs
-
-
-
(Note 4)
-
-
-
-
-
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: IAS = 17.5 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C
3: ISD ≤ 35 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
Typ. Max. Unit
-
-
V
650
-
V
0.6
-
V/oC
700
-
V
-
-
1
10
μA
-
±100 nA
-
5.0
V
0.079 0.098 Ω
28.8
-
S
4990 6640 pF
2380 3170 pF
140
-
pF
113
-
pF
340
-
pF
139
181
nC
31
-
nC
69
-
nC
1.4
-
Ω
34
78
ns
120
250
ns
105
220
ns
73
155
ns
-
35
A
-
105
A
-
1.4
V
614
-
ns
16.3
-
μC
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
2
www.fairchildsemi.com
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