FCA35N60 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FCA35N60 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FCA35N60
Device
FCA35N60
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
BVDS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss eff.
Qg
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Test Conditions
Min.
ID = 250µA, VGS = 0V, TJ = 25oC
600
ID = 250µA, VGS = 0V, TJ = 150oC
-
ID = 250µA, Referenced to 25oC
-
VGS = 0V, ID = 16A
-
VDS = 600V, VGS = 0V
-
VDS = 480V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
VGS = VDS, ID = 250µA
3.0
VGS = 10V, ID = 17.5A
-
VDS = 40V, ID = 17.5A
-
-
VDS = 25V, VGS = 0V
f = 1MHz
-
-
VDS = 480V, VGS = 0V, f = 1.0MHz
-
VDS = 0V to 480V, VGS = 0V
-
-
VDS = 480V, ID = 35A
VGS = 10V
-
(Note 4)
-
Drain Open, F= 1MHZ
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300V, ID = 35A
RG = 4.7Ω
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 35A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 35A
dIF/dt = 100A/µs
-
-
-
(Note 4)
-
-
-
-
-
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: IAS = 17.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 35A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
Typ. Max. Units
-
-
V
650
-
V
0.6
-
V/oC
700
-
V
-
1
µA
-
10
-
±100 nA
-
5.0
V
0.079 0.098 Ω
28.8
-
S
4990 6640 pF
2380 3170 pF
140
-
pF
113
-
pF
340
-
pF
139
181 nC
31
-
nC
69
-
nC
1.4
-
Ω
34
78
ns
120
250
ns
105
220
ns
73
155
ns
-
35
A
-
105
A
-
1.4
V
614
-
ns
16.3
-
µC
FCA35N60 Rev. A
2
www.fairchildsemi.com
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