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KSD526O View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KSD526O
Fairchild
Fairchild Semiconductor Fairchild
KSD526O Datasheet PDF : 4 Pages
1 2 3 4
KSD526
NPN Epitaxial Silicon Transistor
Power Amplifier Applications
• Complement to KSB596
April 2006
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation ( TC=25°C)
Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Value
80
80
5
4
0.4
30
150
-55~150
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
ICBO
IEBO
BVCEO
BVEBO
hFE
VCE(sat)
VBE(on)
fT
Ccb
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Collector Output Capacitance
Test Condition
VCB = 80V, IE = 0
VEB = 5V, IC = 0
IC = 50mA, IB = 0
IE = 10mA, IC = 0
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 3A
VCE = 5V, IC = 0.5A
VCB = 10V, IE = 0, f = 1MHz
MIN
80
5
40
15
3
Units
V
V
V
A
A
W
°C
°C
MAX
50
0.45
1
8
90
MAX
30
100
240
1.5
1.5
Units
μA
μA
V
V
V
V
MHz
pF
hFE Classification
Classification
hFE
R
40∼80
O
70∼140
Y
120∼240
©2006 Fairchild Semiconductor Corporation
1
KSD526 Rev. A1
www.fairchildsemi.com
 

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