2SJ104V View Datasheet(PDF) - Toshiba
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2SJ104V Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ104
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SJ104
Unit: mm
• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
• Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA)
• Complimentary to 2SK364
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
25
V
−10
mA
400
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
IGSS
VGS = 25 V, VDS = 0
V (BR) GDS VDS = 0, IG = 100 μA
IDSS
VDS = −10 V, VGS = 0
(Note 1)
⎯
⎯
1.0
nA
25
⎯
⎯
V
−2.6
⎯
−20 mA
VGS (OFF) VDS = −10 V, ID = −0.1 μA
0.2
⎯
2.0
V
VDS = −10 V, VGS = 0, f = 1 kHz
⎪Yfs⎪
12
30
⎯
mS
(Note 2)
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯ 105 ⎯
pF
Crss
VDG = −10 V, ID = 0, f = 1 MHz
⎯
32
⎯
pF
RDS (ON) VDS = −10 mV, VGS = 0
(Note 2) ⎯
40
⎯
Ω
Note 1: IDSS classification GR: −2.6~−6.5 mA, BL: −6~−12 mA, V: −10~−20 mA
Note 2: Condition of the typical value IDSS = −5 mA
1
2007-11-01
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