SVD8N80F View Datasheet(PDF) - Silan Microelectronics

Part Name

Description

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SVD8N80F

8A, 800V N-CHANNEL MOSFET

Silan Microelectronics 

SVD8N80T/F_Datasheet

8A, 800V N-CHANNEL MOSFET

GENERAL DESCRIPTION

SVD8N80T/F is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary

S-RinTM structure DMOS technology. The improved planar stripe

cell and the improved guard ring terminal have been especially

tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

∗ 8A,800V,RDS(on)（typ）=1.3Ω@VGS=10V

∗ Low gate charge

∗ Low Crss

∗ Fast switching

∗ Improved dv/dt capability

NOMENCLATURE

ORDERING SPECIFICATIONS

Part No.

SVD8N80T

SVD8N80F

Package

TO-220-3L

TO-220F-3L

Marking

SVD8N80T

SVD8N80F

Material

Pb free

Pb free

Packing

Tube

Tube

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.1

2010.10.20

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