FQPF8N80C View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FQPF8N80C Datasheet PDF : 11 Pages
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Package Marking and Ordering Information
Part Number
FQP8N80C
FQPF8N80C
FQPF8N80CYDTU
Top Mark
FQP8N80C
FQPF8N80C
FQPF8N80C
Package
TO-220
TO-220F
TO-220F
(Y-formed)
Packing Method
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C --
0.5
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
V
VGS = 10 V, ID = 4 A
-- 1.29 1.55
Ω
VDS = 50 V, ID = 4 A
(Note 4) --
5.6
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1580 2050 pF
-- 135 175
pF
--
13
17
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 8 A,
RG = 25 Ω
--
40
90
ns
-- 110 230
ns
--
65 140
ns
(Note 4, 5)
--
70 150
ns
VDS = 640 V, ID = 8 A,
--
35
45
nC
VGS = 10 V
--
10
--
nC
(Note 4, 5) --
14
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
32
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 8 A,
dIF / dt = 100 A/µs
-- 690
--
ns
(Note 4) --
8.2
--
µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 25 mH, IAS = 8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Pulse test : pulse-width ≤ 300 µs, duty cycle ≤ 2%.
5. Essentially independent of operating temperature.
©2003 Fairchild Semiconductor Corporation
2
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
www.fairchildsemi.com
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