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AOK8N80 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor

Номер в каталогеКомпоненты Описаниепроизводитель
AOK8N80 800V,7.4A N-Channel MOSFET AOSMD
Alpha and Omega Semiconductor AOSMD
AOK8N80 Datasheet PDF : 5 Pages
1 2 3 4 5
AOK8N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
VDS=640V
ID=8A
12
9
6
3
10000
1000
100
10
Ciss
Coss
Crss
0
0
8
16
24
32
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
8
6
4
2
0
0
25
50
75 100 125 150
TCASE (°C)
Figure 9: Current De-rating (Note B)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.51°C/W
1
1
0.1
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
RDS(ON)
limited
10µs
100µs
1
1ms
DC
10ms
0.1
0.01
TJ(Max)=150°C
TC=25°C
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOK5N100 (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOK5N100 (Note F)
Rev0: Jul 2012
www.aosmd.com
Page 4 of 5
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