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AOK8N80 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor

Номер в каталогеКомпоненты Описаниепроизводитель
AOK8N80 800V,7.4A N-Channel MOSFET AOSMD
Alpha and Omega Semiconductor AOSMD
AOK8N80 Datasheet PDF : 5 Pages
1 2 3 4 5
AOK8N80
800V,7.4A N-Channel MOSFET
General Description
Product Summary
The AOK8N80 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOK8N80L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-247
900@150
7.4A
< 1.63
D
AOK8N80
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
VDS
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol
RθJA
RθCS
RθJC
AOK8N80
800
±30
7.4
4.6
26
3.8
217
433
5
245
2
-55 to 150
300
AOK8N80
40
0.5
0.51
G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Jul 2012
www.aosmd.com
Page 1 of 5
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