BU208A View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

BU208A

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

STMicroelectronics 

BU208A

®

BU508A/BU508AFI

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTORS

s STMicroelectronics PREFERRED

SALESTYPES

s HIGH VOLTAGE CAPABILITY (> 1500 V)

s FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING

APPLICATIONS:

s HORIZONTAL DEFLECTION FOR COLOUR

TV

DESCRIPTION

The BU208A, BU508A and BU508AFI are

manufactured using Multiepitaxial Mesa

technology for cost-effective high performance

and use a Hollow Emitter structure to enhance

switching speeds.

1

2

TO-3

TO-218

3

3

2

2

1

ISOWATT218 1

INTERNAL SCHEMATIC DIAGRAM

For TO-3 :

C = Tab

E = Pin2.

ABSOLUTE MAXIMUM RATINGS

Symbol

VCES

VCEO

VEBO

IC

ICM

Parameter

Collector-Emitter Voltage (VBE = 0)

Collector-Emitter Voltage (IB = 0)

Emitter-Base Voltage (IC = 0)

Collector Current

Collector Peak Current (tp < 5 ms)

Ptot Total Dissipation at Tc = 25 oC

Visol Insulation Withstand Voltage (RMS) from All

Three Leads to Exernal Heatsink

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

BU208A

TO - 3

150

Value

1500

700

10

8

15

BU508A

TO - 218

125

BU508AFI

ISOWATT218

50

2500

Unit

V

V

V

A

A

W

V

-65 to 175 -65 to 150 -65 to 150

oC

175

150

150

oC

April 2002

1/8

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