PN2222A View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
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PN2222A Datasheet PDF : 7 Pages
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NXP Semiconductors
NPN switching transistor
Product data sheet
PN2222A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A; Tj = 125 °C
VEB = 3 V; IC = 0 A
VCE = 10 V; IC = 0.1 mA
VCE = 10 V; IC = 1 mA
VCE = 10 V; IC = 10 mA
VCE = 10 V; IC = 10 mA; Tj = −55 °C
VCE = 1 V; IC = 150 mA
VCE = 10 V; IC = 150 mA
VCE = 10 V; IC = 500 mA
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
VEB = 500 mV; IC = ic = 0 A; f = 1 MHz
VCE = 20 V; IC = 20 mA; f = 100 MHz
VCE = 5 V; IC = 100 µA; RS = 1 kΩ;
f = 1 kHz
Switching times (between 10 % and 90 % levels); see Fig.2
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA; Tamb = 25 °C
MIN. MAX. UNIT
−
10 nA
−
10 µA
−
10 nA
35 −
50 −
75 −
35 −
50 −
100 300
40 −
−
300 mV
1
−
V
0.6 1.2 V
−
2
V
−
8
pF
−
25 pF
300 −
MHz
−
4
dB
−
35 ns
−
15 ns
−
20 ns
−
250 ns
−
200 ns
−
60 ns
2004 Oct 11
3
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