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BU2523DF View Datasheet(PDF) - Philips Electronics

Part Name
Description
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BU2523DF
Philips
Philips Electronics Philips
BU2523DF Datasheet PDF : 0 Pages
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523DF
TRANSISTOR
IC
DIODE
ICsat
t
IB
I B end
t
5 us
6.5 us
16 us
VCE
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
IF
IF
10%
t fr
time
VF
5V
V fr
VF
time
Fig.3. Definition of anti-parallel diode Vfr and tfr.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.4. Switching times test circuit.
hFE
100
VCE = 1 V
BU2523DF/X
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
10 IC / A 100
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 1 V
hFE
100
VCE = 5 V
BU2523DF/X
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
10 IC / A 100
Fig.6. High and low DC current gain. hFE = f (IC)
VCE = 5 V
September 1997
3
Rev 1.200
 

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