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BU2523 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BU2523
Philips
Philips Electronics Philips
BU2523 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523AF
ts/tf / us
5
BU2523AF/DF/AX/DX
4
3
2
1
0
0
0.5
1
1.5
2
IB / A
Fig.9. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); IC = 5.5 A; Tj = 85˚C; f = 64 kHz
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Tmb)
Zth / (K/W)
10
BU2525AF
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
PD
tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.11. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.12. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 5 V;
LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH;
CFB = 0.5 - 8 nF; IB(end) = 0.55 - 1.1 A
IC / A
30
BU2523
20
Area where
fails occur
10
0
100
1000 1500
VCE / V
Fig.13. Reverse bias safe operating area. Tj Tjmax
Ic(sat) (A)
8
BU2523AF/AX
7
6
5
4
3
2
1
00
10 20 30 40 50 60 70 80
frequency (kHz)
Fig.14. ICsat during normal running vs. frequency of
operation for optimum performance
September 1997
4
Rev 1.100
 

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