datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BU2523AF View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BU2523AF
Philips
Philips Electronics Philips
BU2523AF Datasheet PDF : 6 Pages
1 2 3 4 5 6
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523AF
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB
T.U.T.
Cfb
Fig.3. Switching times test circuit.
hFE
100
VCE = 1 V
BU2523AF/X
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
10 IC / A 100
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
hFE
100
VCE = 5 V
BU2523AF/X
Ths = 25 C
Ths = 85 C
10
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
IC/IB = 10
0.1
BU2523AF/X
IC/IB = 5
0.01
0.1
1
10
100
IC / A
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
VBEsat / V
1.2
1.1
IC = 6 A
1
BU2523AF/X
Ths = 25 C
Ths = 85 C
0.9
0.8
IC = 4.5 A
0.7
0.6
0
1
2
3
4
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
PTOT / W
100
BU2523AF/DF/AX/DX
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
10 IC / A 100
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
1
0
0.5
1
1.5
2
IB / A
Fig.8. Typical losses.
PTOT = f (IB); IC =5.5 A; f = 64 kHz
September 1997
3
Rev 1.100
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]