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TD13004D View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
TD13004D Silicon NPN High Voltage Switching Transistor Vishay
Vishay Semiconductors Vishay
TD13004D Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Switching Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Resistive load (figure 3)
Turn on time
Storage time
IC = 2 A; IB1 = –IB2 = 0.4 A;
VS = 125 V
Fall time
Inductive load (figure 4)
Storage time
Cross over time
Free-wheel diode
IC = 2 A; IB1 = 0.4 A;
L = 200 mH; Vclamp = 300 V;
–VBE = 5 V; Tcase = 100°C
Reverse recovery time IF = 0.5 A; IR = 1 A; iR = 0.25 A
Forward recovery time IF = 2 A; diF/dt = 10 A/ms
Reverse recovery time IF = 2 A; –diF/dt = 5 A/ms
IF = 2 A; –diF/dt = 5 A/ms
TD13004D TD13005D
Vishay Telefunken
Type Symbol Min Typ Max Unit
ton
0.25 0.4 ms
ts
1.5 2.5 ms
tf
0.15 0.3 ms
ts
1.2
2
ms
tc
0.4 0.7 ms
trr
0.7
1
ms
tfr
0.4
ms
trr
1.1
ms
tIRM
0.9
ms
VF
VFP
95 9666
110%
100%
t
tfr
Figure 1. Turn on transient peak voltage
Document Number 86525
Rev. 2, 20–Jan–99
www.vishay.de FaxBack +1-408-970-5600
3 (10)
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