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TD13005D View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
TD13005D Silicon NPN High Voltage Switching Transistor Vishay
Vishay Semiconductors Vishay
TD13005D Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
TD13004D TD13005D
Vishay Telefunken
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
Value
Unit
RthJC
3
K/W
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Type Symbol Min Typ Max Unit
Transistor
Collector cut-off
current
Collector-emitter
breakdown voltage
(figure 1)
Emitter-base
breakdown voltage
VCE = 600 V
TD13004D ICES
VCE = 700 V
TD13005D ICES
VCE = 600 V; Tcase = 150°C TD13004D ICES
VCE = 700 V; Tcase = 150°C TD13005D ICES
IC = 300 mA; L = 125 mH;
Imeasure = 100 mA
TD13004D V(BR)CEO 300
TD13005D V(BR)CEO 400
IE = 1 mA
V(BR)EBO 9
50 mA
50 mA
0.5 mA
0.5 mA
V
V
V
Collector-emitter
saturation voltage
IC = 2 A; IB = 0.5 A
VCEsat
0.6 V
Base-emitter
saturation voltage
IC = 2 A; IB = 0.5 A
VBEsat
1.6 V
DC forward current
transfer ratio
Dynamic saturation
voltage
Gain bandwidth
product
VCE = 5 V; IC = 10 mA
VCE = 5 V; IC = 1 A
VCE = 5 V; IC = 4 A
IC = 2 A; IB = 0.4 A; t = 1 ms
IC = 2 A; IB = 0.4 A; t = 3 ms
VCE = 10 V; IC = 500 mA;
f = 1 MHz
hFE
10
hFE
10
hFE
4
VCEsatdyn
3
VCEsatdyn
1
fT
4
V
V
MHz
Free-wheel diode
Forward voltage
Turn-on transient
peak voltage
IF = 2 A
IF = 2.5 A; diF/dt = 10 A/ms
VF
1.3 1.5 V
VFP
4
5
V
Reverse recovery
current
IF = 2.5 A; –diF/dt = 5 A/ms;
VS = 200 V
IRM
5
A
www.vishay.de FaxBack +1-408-970-5600
2 (10)
Document Number 86525
Rev. 2, 20–Jan–99
Direct download click here

 

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