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BUZ104SE3045A View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
BUZ104SE3045A SIPMOS® Power Transistor Infineon
Infineon Technologies Infineon
BUZ104SE3045A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 104S
Typ. output characteristics
ID = f (VDS)
parameter: tp = 80 µs
BUZ104S
32 Ptot = 35W
A
l
kj
VGS [V]
a
4.0
24
b
4.5
ic
5.0
d
5.5
20
he
6.0
f
6.5
16
gg
7.0
h
7.5
fi
8.0
12
j
9.0
e
k
10.0
8
l
20.0
d
c
4
b
a
0
0.0
1.0
2.0
3.0
4.0 V 5.5
VDS
Typ. transfer characteristics ID= f (VGS)
parameter: tp = 80 µs
VDS 2 x ID x RDS(on) max
40
A
Typ. drain-source-on-resistance
RDS(on) = f (ID)
parameter: VGS
BUZ104S
0.26
c
de
f
g
h
i
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
j
k
l
0.04 VGS [V] =
0.02
cdef
5.0 5.5 6.0 6.5
ghi j kl
7.0 7.5 8.0 9.0 10.0 20.0
0.00
0
4
8
12 16 20 A 26
ID
Typ. forward transconductance
gfs = f(ID); Tj = 25˚C
parameter: gfs
7
S
5
4
20
3
2
10
1
0
2 3 4 5 6 7 8 9 10 V 12
VGS
Data Book
6
0
0 2 4 6 8 10 12 14 A 17
ID
05.99
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