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BUZ104SLE3045 View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
BUZ104SLE3045 SIPMOS® Power Transistor Infineon
Infineon Technologies Infineon
BUZ104SLE3045 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 104SL
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = 40 V, ID = 12.5 A
Qgs
-
1.5 2.3 nC
Gate to drain charge
VDD = 40 V, ID = 12.5 A
Qgd
-
5.3
8
Gate charge total
Qg
VDD = 40 V, ID = 12.5 A, VGS = 0 to 10 V
- 13.5 20
Gate plateau voltage
VDD = 40 V, ID = 12.5 A
V(plateau)
-
4
-V
Reverse Diode
Inverse diode continuous forward current
IS
TC = 25 ˚C
-
- 12.5 A
Inverse diode direct current,pulsed
TC = 25 ˚C
ISM
-
-
50
Inverse diode forward voltage
VGS = 0 V, IF = 25 A
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
VSD
- 1.14 1.8 V
trr
-
50 75 ns
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Qrr
-
0.1 0.15 µC
Data Book
4
05.99
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