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BUZ104SLE3045A View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BUZ104SLE3045A
Infineon
Infineon Technologies Infineon
BUZ104SLE3045A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 104SL
SIPMOSPower Transistor
Features
N channel
Enhancement mode
Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Logic Level
dv/dt rated
175 ˚C operating temperature
VDS
55 V
RDS(on) 0.064
ID
12.5 A
Type
BUZ104SL
BUZ104SL E3045A
BUZ104SL E3045
Package Ordering Code Packaging
P-TO220-3-1 Q67040-S4006-A2 Tube
P-TO263-3-2 Q67040-S4006-A6 Tape and Reel
P-TO263-3-2 Q67040-S4006-A5 Tube
Pin 1 Pin 2 Pin 3
G
D
S
Maximum Ratings, at Tj = 25 ˚C unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 ˚C
TC = 100 ˚C
Pulsed drain current
IDpulse
TC = 25 ˚C
Avalanche energy, single pulse
EAS
ID = 12.5 A, VDD = 25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 12.5 A, VDS = 40 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
Gate source voltage
VGS
Power dissipation
Ptot
TC = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
12.5
8.8
50
52
3.5
6
–20
35
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
˚C
Data Book
1
05.99
 

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