IRF054 View Datasheet(PDF) - New Jersey Semiconductor
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Description
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IRF054
New Jersey Semiconductor
IRF054 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
., Lf nc.
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on)
IRF054
60V 0.022Q
ID
45A*
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRF054
60V, N-CHANNEL
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
• RepetitiveAvalanche Ratings
• Dynamic dv/dt Rating
• Hermetically Sealed
• Simple Drive Requirements
• Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = ov, TC = 25°c
ID @ VGS -ov,TC = ioo°c
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
Tj
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current (D
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ®
Avalanche CurrentCD
Repetitive Avalanche Energy CD
Peak Diode Recovery dv/dt <D
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current limited by pin diameter.
For footnotes refer to the last page
Units
45*
31
A
220
150
w
1.2
w/°c
±20
V
480
mJ
-
A
-
mJ
4,5
V/ns
-55 to 150
"C
300 (0.063 in. (1.6mm) from case for 10s)
ll.S(typical)
e
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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