Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD136 BD138 BD140
DESCRIPTION
·
·With TO-126 package
·High current
·Complement to type BD135/137/139
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
固I电NC半H导A体NGE SEMICONDUCTOR VCBO
VCEO
VEBO
PARAMETER
BD136
Collector-base voltage BD138
BD140
BD136
Collector-emitter voltage BD138
BD140
Emitter -base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-45
-60
-100
-45
-60
-100
-5
UNIT
V
V
V
IC
Collector current (DC)
-1.5
A
ICM
Collector current-Peak
-2
A
IBM
Base current-Peak
-1
A
Pt
Total power dissipation
Tmb≤70℃
8
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Tamb
Operating ambient temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
100
10
UNIT
K/W
K/W