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2PB709AS View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
2PB709AS PNP general purpose transistor NXP
NXP Semiconductors. NXP
2PB709AS Datasheet PDF : 6 Pages
1 2 3 4 5 6
NXP Semiconductors
PNP general purpose transistor
Product data sheet
2PB709A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PB709AQ
2PB709AR
2PB709AS
collector-emitter saturation
voltage
collector capacitance
transition frequency
2PB709AQ
2PB709AR
2PB709AS
Note
1. Pulse test: tp 300 μs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 45 V
IE = 0; VCB = 45 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 2 mA; VCE = 10 V
IC = 100 mA; IB = 10 mA; note 1
MIN.
MAX.
10
5
10
UNIT
nA
μA
nA
160
260
210
340
290
460
500 mV
IE = ie = 0; VCB = 10 V; f = 1 MHz
5
IC = 1 mA; VCE = 10 V; f = 100 MHz
60
70
80
pF
MHz
MHz
MHz
1999 Apr 23
3
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