NXP Semiconductors
PNP general purpose transistor
Product data sheet
2PB709A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PB709AQ
2PB709AR
2PB709AS
collector-emitter saturation
voltage
collector capacitance
transition frequency
2PB709AQ
2PB709AR
2PB709AS
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = −45 V
IE = 0; VCB = −45 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −2 mA; VCE = −10 V
IC = −100 mA; IB = −10 mA; note 1
MIN.
−
−
−
MAX.
−10
−5
−10
UNIT
nA
μA
nA
160
260
210
340
290
460
−
−500 mV
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
5
IC = −1 mA; VCE = −10 V; f = 100 MHz
60
−
70
−
80
−
pF
MHz
MHz
MHz
1999 Apr 23
3