IRL3502PbF
8000
6000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
Coss
2000
Crss
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15 ID = 64A
12
VDS = 16V
9
6
3
0
0
40
80
120
160
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
TJ = 150° C
100
TJ = 25° C
10
0.5
VGS = 0 V
1.0
1.5
2.0
2.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
100
1ms
TC = 25°C
TJ = 150° C
Single Pulse
10ms
10
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area