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FS10KMJ-2 データシートの表示(PDF) - Renesas Electronics

部品番号コンポーネント説明メーカー
FS10KMJ-2 Nch POWER MOSFET HIGH-SPEED SWITCHING USE Renesas
Renesas Electronics Renesas
FS10KMJ-2 Datasheet PDF : 5 Pages
1 2 3 4 5
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
Tch = 25°C
ID = 10A
8
VDS = 20V
6
50V
80V
4
2
0
0
4
8
12 16 20
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS10KMJ-2
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
VGS = 0V
Pulse Test
32
24
16
TC = 125°C
8
75°C
25°C
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7 VGS = 10V
5
4
ID = 1/2ID
Pulse Test
3
2
100
7
5
4
3
2
10–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
3
2
101
7 D = 1.0
5 0.5
3
2 0.2
PDM
100
7
0.1
5
0.05
3
2
0.02
0.01
Single Pulse
tw
T
D= tw
T
10–1
10–42 3
5710–32 3
5710–22 3
5710–12 3
5 7 100
23
5 7 101
23
5 7 102
PULSE WIDTH tw (s)
Feb.1999
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