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H7N1004LD View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
H7N1004LD Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
H7N1004LD, H7N1004LS, H7N1004LM
Drain to Source Saturation Voltage VS.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
I D = 20 A
0.4
10 A
0.2
5A
0
5
10
15
20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
V GS = 4.5 V
20
10 V
10
5
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
I D = 20 A
5, 10 A
60
40 V GS = 4.5 V
I D = 20 A
20
V GS = 10 V
5, 10 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
10
1
25°C
0.1
0.01
0.01
75°C
V DS = 10 V
Pulse Test
0.1
1
10
100
Drain Current I D (A)
Rev.6.00, Aug.27.2003, page 5 of 11
 

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