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FQD11P06TM View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD11P06TM 60V P-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQD11P06TM Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = -250 µ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
102
Operation in This Area
is Limited by R DS(on)
100 µs
101
1 ms
10 ms
DC
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
100
101
102
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = -10 V
2. ID = -4.7 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0.5
100
0 .2
0 .1
0.0 5
1 0 -1
0 .02
0.01
sin gle pu lse
N otes :
1 . Z θ JC(t) = 3 .2 8 /W M a x .
2. D uty F acto r, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
Rev. C5, October 2008
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