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FQD11P06TM View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQD11P06TM
Fairchild
Fairchild Semiconductor Fairchild
FQD11P06TM Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-60
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = -250 µA, Referenced to 25°C --
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 125°C
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V
--
--
-0.07
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
V
VGS = -10 V, ID = -4.7 A
-- 0.15 0.185
VDS = -30 V, ID = -4.7 A (Note 4) --
4.9
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
420 550
pF
--
195 250
pF
--
45
60
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -5.7 A,
RG = 25
--
6.5
25
ns
--
40
90
ns
--
15
40
ns
(Note 4, 5)
--
45
100
ns
VDS = -48 V, ID = -11.4 A,
--
13
17
nC
VGS = -10 V
--
2.0
--
nC
(Note 4, 5)
--
6.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-9.4
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- -37.6 A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -9.4 A
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -11.4 A,
--
83
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.26
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, IAS = -9.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -11.4A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. C6,January 2009
 

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