2SK4094
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=50A, VGS=4V
VDS=20V, f=1MHz
See Fig.2
VDS=30V, VGS=10V, ID=100A
IS=100A, VGS=0V
Ratings
Unit
min
typ
max
60
V
1
μA
±10
μA
1.2
2.6
V
45
75
S
3.8
5.0 mΩ
4.9
7.0 mΩ
12500
pF
1200
pF
950
pF
80
ns
630
ns
860
ns
750
ns
220
nC
30
nC
55
nC
1.0
1.2
V
Fig.1 Avalanche Resistance Test Circuit
L
≥50Ω
10V
0V
50Ω
2SK4094
Fig.2 Switching Time Test Circuit
VDD
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=30V
ID=50A
RL=0.6Ω
D
VOUT
2SK4094
P.G
50Ω
S
ID -- VDS
200
Tc=25°C
180
4V
Single pulse
160
140
120
100
80
VGS=3V
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V IT11430
200
VDS=10V
180 Single pulse
ID -- VGS
160
140
120
100
80
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Gate-to-Source Voltage, VGS -- V IT11431
No. A0523-2/5