J418 View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

View to exact match

J418

P-Channel Silicon MOSFET

SANYO -> Panasonic 

2SJ418

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Symbol

VDSS

VGSS

ID

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Electrical Characteristics at Ta = 25˚C

Conditions

PW≤10µs, duty cycle≤1%

Tc=25˚C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage

Marking : J418

Symbol

Conditions

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

ID=–1mA, VGS=0

VDS=–30V, VGS=0

VGS=±16V, VDS=0

VDS=–10V, ID=–1mA

VDS=–10V, ID=–4A

ID=–4A, VGS=–10V

ID=–4A, VGS=–4V

VDS=–10V, f=1MHz

VDS=–10V, f=1MHz

VDS=–10V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

IS=–8A, VGS=0

Switching Time Test Circuit

VIN

0V

—10V

VIN

PW=10s

D.C.≤1%

VDD=—15V

ID=—4A

RL=3.75Ω

D

VOUT

G

2SJ418

P.G

50Ω

S

Ratings

Unit

–30 V

±20 V

–8 A

–32 A

1.0 W

30 W

150 ˚C

–55 to +150 ˚C

Ratings

Unit

min typ max

–30

V

–100 µA

±10 µA

–1.0

–2.5 V

3

7

S

60

80 mΩ

105 145 mΩ

800

pF

500

pF

140

pF

15

ns

60

ns

170

ns

90

ns

–1.0 –1.2 V

No.5298–2/4

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