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K2611B View Datasheet(PDF) - Unspecified

Part Name
Description
View to exact match
K2611B
ETC
Unspecified ETC
K2611B Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Electrical Characteristics(Tc=25)
K2611B
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100 nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
VDS=900V,VGS=0V
-
IDSS
VDS=720V,Tc=125
-
10
µA
100
µA
Drain -source breakdown voltage
V(BR)DSS ID=250µA,VGS=0V
900
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250µA
3.0
-
5.0
V
Drain -source ON resistance
RDS(ON) VGS=10V,ID=5.5A
-
0.95 1.10
Forward Transconductance
gfs
VDS=50V,ID=5.5A
-
12
-
S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
-
2700 3500
-
30
40
pF
-
260
340
Turn-on Rise time
tr
VDD=450V,
-
135
280
Switching time
Turn-on Delay time
Turn-on Fall time
Turn-off Delay time
td(on) ID=11A
-
tf
RG=25Ω
-
td(off)
(Note4,5) -
65
140
ns
90
190
165
340
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
VDD=720V,
Qg
VGS=10V,
Qgs
ID=11A
-
72
94
nC
-
16
-
Gate-drain("miller") Charge
Qgd
(Note4,5) -
35
-
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
11
A
Pulse drain reverse current
IDRP
-
-
-
45
A
Forward voltage(diode)
VDSF
IDR=11A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=11A,VGS=0V,
-
850
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
11.2
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=15mH IAS=11A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤11A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
 

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