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STP24N60M2 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STP24N60M2 Datasheet PDF : 22 Pages
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STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VGS Gate-source voltage
± 25
ID Drain current (continuous) at TC = 25 °C
18
ID Drain current (continuous) at TC = 100 °C
12
IDM (1) Drain current (pulsed)
72
PTOT Total dissipation at TC = 25 °C
150
dv/dt (2) Peak diode recovery voltage slope
15
dv/dt(3) MOSFET dv/dt ruggedness
50
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 18 A, di/dt 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.
3. VDS 480 V
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D2PAK I2PAK TO-220 TO-247
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max(1)
30
Rthj-amb Thermal resistance junction-ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
0.83
62.5
°C/W
°C/W
50 °C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax )
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID= IAR; VDD=50)
3.5
A
180
mJ
DocID023964 Rev 4
3/22
 

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