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TIP105 View Datasheet(PDF) - New Jersey Semiconductor

Part NameDescriptionManufacturer
TIP105 PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTOR NJSEMI
New Jersey Semiconductor NJSEMI
TIP105 Datasheet PDF : 2 Pages
1 2
TIP100, TIP101, TIP102 NPN / TIP105, TIP106, TIP107 PNP
ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted )
Characteristic
Symbol
Win
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
CEO(cus)
V
(lc = 30mA.IB = 0)
TIP100.TIP105
60
TIP101.TIP106
80
TIP102.TIP107
100
Collector Cutoff Current
(Ves = 30V, , = 0 )
(VCI = 40V, . = 0 )
(Vei = 50V, . = 0 )
TIP100.TIP105
TIP101.TIP106
TIP102.TIP107
uA
50
50
50
Collector Cutoff Current
( VCB = 60 V, E = 0 )
(VC1 = 80V, s = 0 )
(VC.= 100V.IS = 0 )
'cBO
TIP100.TIP105
TIP101.TIP106
TIP102.TIP107
uA
50
50
50
Emitter Cutoff Current
(VEB = 5.0V,IC=0 )
'EBO
mA
8.0
ON CHARACTERISTICS (1)
DC Current Gain
( lc = 3.0 A, VC6 = 4.0 V )
( lc = 8.0 A, Vci = 4.0 V )
Collector-Emitter Saturation Voltage
( lc = 3.0 A, IB = 6.0 mA )
( lc = 8.0 A, IB = 80 mA )
Base-Emitter On Voltage
( lc = 8.0 A, VCE = 4.0 V )
hi-e
1000
20000
200
VCE(iat)
V
2.0
2.5
V^on,
V
2.8
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
( lc = 3.0 A,VCE = 4.0 V, f =1.0 MHz )
h*
4.0
Output Capacitance
Cob
(VCB = 10 V, I- = 0 , f = 0.1 MHz ) TIP100,TIP101,TIP102
TIP105,TIP106,TIP107
PF
300
250
(1) Pulse Test Pulse width * 300 us , Duty Cycle < 2.0%
NPN
TIP100
TIP101
TIP102
INTERNAL SCHEMATIC DIAGRAM
c
PNP
I
TIP105
r
TIP106
TIP107
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