TEA1207T View Datasheet(PDF) - Philips Electronics
Part Name
Description
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TEA1207T Datasheet PDF : 20 Pages
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Philips Semiconductors
High efficiency DC/DC converter
Product specification
TEA1207T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
η2
efficiency downconversion
VI = 3.6 V; VO = 2.0 V;
L1 = 10 µH; note 5
IL = 1 mA
−
86
−
%
IL = 10 mA
−
91
−
%
IL = 50 mA
−
92
−
%
IL = 100 mA
−
92
−
%
IL = 200 mA
−
93
−
%
IL = 500 mA
−
89
−
%
IL = 1 A; pulsed
−
81
−
%
Timing
fsw
switching frequency
fsync
synchronization clock input
frequency
PWM mode
220
275
330
kHz
4
6.5
20
MHz
tres
response time
from standby to Po(max) −
50
−
µs
Temperature
Tamb
Tmax
ambient temperature
internal cut-off temperature
−40
+25
+80
°C
150
175
200
°C
Digital levels
VlL
LOW-level input voltage
on pins 1, 5 and 8
0
−
0.4
V
VIH
HIGH-level input voltage
on pin 1
on pins 5 and 8
note 6
V3 − 0.4 −
0.55V3 −
V3 + 0.3 V
V3 + 0.3 V
Notes
1. The undervoltage lockout voltage shows wide specification limits since it decreases at increasing temperature. When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range.
2. When VI is lower than the target output voltage but higher than 2.8 V, the P-type power MOSFET will remain
conducting (100% duty cycle), resulting in VO following VI.
3. V3 is the voltage on pin 3 (UPOUT/DNIN).
4. The current limit is defined by an external resistor Rlim (see Section “Current limiting resistors”). Accuracy of the
current limit increases in proportion to the programmed current limiting level.
5. The specified efficiency is valid when using an output capacitor having an ESR of 0.10 Ω and a 10 µH small size
inductor (Coilcraft DT1608C-103).
6. If the applied HIGH-level voltage is less than V3 − 1 V, the quiescent current (lq) of the device will increase.
2000 Nov 27
10
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