K4100LS View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

View to exact match

K4100LS

N-Channel Silicon MOSFET

SANYO -> Panasonic 

2SK4100LS

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

Conditions

V(BR)DSS

IDSS

IGSS

VGS(off)

yfs

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=10mA, VGS=0V

VDS=520V, VGS=0V

VGS=±30V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=3A

ID=3A, VGS=10V

VDS=30V, f=1MHz

VDS=30V, f=1MHz

VDS=30V, f=1MHz

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

VDS=200V, VGS=10V, ID=6A

VDS=200V, VGS=10V, ID=6A

VDS=200V, VGS=10V, ID=6A

IS=6A, VGS=0V

Package Dimensions

unit : mm (typ)

7509-002

10.0

3.2

4.5

2.8

Ratings

Unit

min

typ

max

650

V

100 µA

±100 nA

3

5

V

2

4

S

1.05

1.35

Ω

600

pF

110

pF

24

pF

18

ns

41

ns

78

ns

28

ns

23

nC

4.5

nC

13

nC

0.9

1.2

V

0.9

1.2

0.75

123

2.55

2.55

1.2

0.7

1 : Gate

2 : Drain

3 : Source

SANYO : TO-220FI(LS)

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10µs

D.C.≤0.5%

G

VDD=200V

ID=3A

RL=66.7Ω

D

VOUT

2SK4100LS

P.G

RGS=50Ω S

Avalanche Resistance Test Circuit

L

≥50Ω

RG

2SK4100LS

10V

0V

50Ω

VDD

No. A0778-2/5

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