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IRF9520 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
IRF9520
Fairchild
Fairchild Semiconductor Fairchild
IRF9520 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF9520
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
I SD
ISDM
Modified MOSFET Sym-
bol Showing the Integral
Reverse P-N Junction
Diode
-
-
-6.0
A
D
-
-
-24
A
G
S
Source to Drain Diode Voltage
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
TC = 25oC, ISD = -6.0A, VGS = 0V
-
(Figure 13)
trr
TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/µs
-
Q RR
TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/µs
-
-
-1.5
V
230
-
ns
1.3
-
µC
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 15.4mH, RG = 25Ω, peak IAS = 6.0A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TA, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
6.0
4.8
3.6
2.4
1.2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRF9520 Rev. B
 

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