datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

IRF9520 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
IRF9520
Fairchild
Fairchild Semiconductor Fairchild
IRF9520 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Data Sheet
January 2002
IRF9520
6A, 100V, 0.600 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
P-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. These types
can be operated directly from integrated circuits.
Formerly developmental type TA17501.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9520
TO-220AB
IRF9520
NOTE: When ordering, use the entire part number.
Features
• 6A, 100V
• rDS(ON) = 0.600
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
IRF9520 Rev. B
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]