2SK3290
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
ID
500
Drain peak current
I Note1
D(pulse)
2
Body-drain diode reverse drain current IDR
500
Channel dissipation
Pch Note 2
400
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Unit
V
V
mA
A
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown V(BR)DSS 30
voltage
Gate to source breakdown V(BR)GSS ±20
voltage
Gate to source leak current IGSS
—
Zero gate voltege drain
I DSS
—
current
Gate to source cutoff voltage VGS(off)
1.3
Static drain to source on state RDS(on)
—
resistance
RDS(on)
—
Forward transfer admittance |yfs|
350
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Note: 3. Pulse test
4. Marking is BN
Typ
—
—
—
—
—
0.455
0.9
540
5
30
2
240
1700
850
1300
Max
—
—
±5
-1
2.3
0.525
1.25
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
Test Conditions
ID = 100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 10µA, VDS = 5 V
ID = 250 mA,VGS = 10 V Note 3
ID = 100 mA,VGS = 4 V Note 3
ID = 250 mA, VDS = 10 V Note 3
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 250 mA, VGS = 10 V
RL = 40Ω
2