BCP54 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

View to exact match

BCP54

NPN General Purpose Amplifier

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

NPN General Purpose Amplifier

(continued)

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0

45

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 100 µA, IE = 0

45

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10 µA, IC = 0

5.0

V

ICBO

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 125°C

VEB = 5.0 V, IC = 0

100

nA

10

µA

10

µA

ON CHARACTERISTICS

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 5.0 mA, VCE = 2.0 V

IC = 150 mA, VCE = 2.0 V

IC = 500 mA, VCE = 2.0 V

IC = 500 mA, IB = 50 mA

IC = 500 mA, VCE = 2.0 V

25

40

250

25

0.5

V

1.0

V

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

500

400

VCE = 5V

300

200

- 40 ºC

100

125 °C

25 °C

0

0.001

0.01

0.1

12

I C - COLLECTOR CURRENT (A)

Collector-Emitter Saturation

Voltage vs Collector Current

0.6

β = 10

0.5

0.4

125 ºC

0.3

25°C

0.2

0.1

- 40 ºC

0

0.01

0.1

1

3

I C - COLLECTOR CURRENT (A)

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