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BCP55 View Datasheet(PDF) - Siemens AG

Part Name
Description
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BCP55 Datasheet PDF : 5 Pages
1 2 3 4 5
BCP 54
... BCP 56
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA, IB = 0
BCP 54
45
BCP 55
60
BCP 56
80
Collector-base breakdown voltage1)
V(BR)CB0
IC = 100 µA, IB = 0
BCP 54
45
BCP 55
60
BCP 56
100 –
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EB0 5
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
ICB0
100 nA
20
µA
Emitter-base cutoff current
VEB = 5 V
IEB0
10
µA
DC current gain
hFE
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V
BCP 54/BCP 55/BCP 56
BCP 54/BCP 55/BCP 56-10
BCP 54/BCP 55/BCP 56-16
IC = 500 mA, VCE = 2 V
25
40
250
63
100 160
100 160 250
25
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat
0.5 V
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V
VBE
1
AC characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT
100 –
MHz
1) Pulse test conditions: t 300 µs, D = 2 %.
Semiconductor Group
3
 

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