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BU2522AW View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BU2522AW
Philips
Philips Electronics Philips
BU2522AW Datasheet PDF : 0 Pages
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2522AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Tmb 25 ˚C
IC = 6.0 A; IB = 1.2 A
f = 64 kHz
ICsat = 6.0 A; f = 64 kHz
TYP.
-
-
-
-
-
-
6.0
0.12
MAX.
1500
800
10
25
125
5.0
-
0.25
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT429
PIN
DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
10
25
6
9
150
6
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 1.100
 

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