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K3366 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3366
NEC
NEC => Renesas Technology NEC
K3366 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
6.5±0.2
5.0±0.2
4
123
1.1±0.2
2.3±0.2
0.5±0.1
2.3 2.3
0.5-+00..12
0.5-+00..12
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2SK3366
2) TO-252 (MP-3Z)
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
6
Data Sheet D14256EJ3V0DS
 

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